BFG10X_95 Datasheet, PDF (8/10 Pages) NXP Semiconductors – NPN 2 GHz RF power transistor

Philips Semiconductors
NPN 2 GHz RF power transistor
handbook, full pagewidth
60
Product specification
BFG10; BFG10/X
Vbias
R2
Base
T1
R1
Collector
70
L10
C12
C13
L9
C11
C14
C15
VS
C16
L8
L7
C10
C3 C4 _{C5 L6}
C6
C2
C1
L1
L5
C9
Base
L2 L3 L4 C7 C8 _Collector
MLC823
Dimensions in mm.
The components are situated on one side of the copper-clad PTFE microfibre-glass board, the other side is not etched and
serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.
Fig.8 Printed-circuit board and component lay-out for common-emitter test circuit in Fig.7.
1995 Aug 31
8