BFG10X_95 Datasheet, PDF (3/10 Pages) NXP Semiconductors – NPN 2 GHz RF power transistor

Philips Semiconductors
NPN 2 GHz RF power transistor
Product specification
BFG10; BFG10/X
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-s}
thermal resistance from junction to
soldering point
up to T_s = 60 °C; note 1;
P_tot = 400 mW
Note
1. T_s is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CES
h_FE
C_c
C_re
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
collector capacitance
feedback capacitance
CONDITIONS
open emitter; I_C = 0.1 mA
open base; I_C = 5 mA
open collector; I_E = 0.1 mA
V_CE = 5 V; V_BE = 0
I_C = 50 mA; V_CE = 5 V
I_E = i_e = 0; V_CB = 3.6 V; f = 1 MHz
I_C = 0; V_CE = 3.6 V; f = 1 MHz
VALUE
290
UNIT
K/W
MIN.
20
8
2.5
−
25
−
−
MAX. UNIT
−
V
−
V
−
V
100 µA
−
3
pF
2
pF
handbook⁵,⁰h⁰alfpage
P _tot
(mW)
400
300
200
100
0
0
50
MLC818
100
150 _{Ts (oC)} 200
Fig.2 Power derating curve
2.0
handbook, halfpage
Cc
(pF)
1.5
MLC819
1.0
0.5
0
0
2
4
6
8
10
VCB (V)
I_C = 0; f = 1 MHz.
Fig.3 Collector capacitance as a function of
collector-base voltage; typical values.
1995 Aug 31
3