BFG10X_95 Datasheet, PDF (4/10 Pages) NXP Semiconductors – NPN 2 GHz RF power transistor

Philips Semiconductors
NPN 2 GHz RF power transistor
Product specification
BFG10; BFG10/X
APPLICATION INFORMATION
RF performance at T_amb = 25 °C in a common-emitter test circuit (see Fig.7).
MODE OF OPERATION
f
V_CE
I_CQ
(GHz)
(V)
(mA)
Pulsed, class-AB, duty cycle: < 1 : 8
1.9
3.6
1
P_L
(mW)
200
G_p
(dB)
>5
typ. 7
η_c
(%)
>50
typ. 60
Ruggedness in class-AB operation
The BFG10 is capable of withstanding a load mismatch corresponding to VSWR = 8 : 1 through all phases, at rated
output power under pulsed conditions up to a supply voltage of 7 V, f = 1.9 GHz and a duty cycle of 1 : 8.
10
handbook, halfpage
Gp
(dB)
8
6
4
MLC820
100
η_c
η_c
(%)
80
Gp
60
40
2
20
0
0
0
100
200
300
400
500
PL (mW)
Pulsed, class-AB operation.
V_CE = 3.6 V; V_BE = 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8.
Circuit optimized for P_L = 200 mW.
Fig.4 Power gain and efficiency as functions
of load power; typical values.
500
handb_Po_Lok, halfpage
(mW)
400
300
200
100
0
0
50
MLC821
100
150
PD (mW)
Pulsed, class-AB operation.
V_CE = 3.6 V; V_BE = 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8.
Circuit optimized for P_L = 200 mW.
Fig.5 Load power as a function of drive
power; typical values.
1995 Aug 31
4