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SA58637 Datasheet, PDF (7/22 Pages) NXP Semiconductors – 2 X 2.2 W BTL audio amplifier
NXP Semiconductors
SA58637
2 × 2.2 W BTL audio amplifier
Table 7. Static characteristics …continued
VCC = 6 V; Tamb = 25 °C; RL = 8 Ω; VMODE = 0 V; measured in test circuit Figure 3; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ Max
VO
∆VO(offset)
IIB
output voltage
differential output voltage offset
input bias current
pins INL+, INR+
pins INL−, INR−
[2] -
2.2 -
-
-
50
-
-
500
-
-
500
VMODE
voltage on pin MODE
IMODE
VSELECT
current on pin MODE
voltage on pin SELECT
operating
mute
standby
0 V < VMODE < VCC
both channels on
left channel on
right channel on
0
-
1.5
-
VCC − 0.5 -
-
-
1.5
-
VCC − 0.5 -
GND
-
0.5
VCC − 1.5
VCC
20
VCC − 1.5
VCC
0.5
II(SELECT)
input current on pin SELECT
VSELECT = 0 V
-
-
100
Unit
V
mV
nA
nA
V
V
V
µA
V
V
V
µA
[1] With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal to the DC output
offset voltage divided by RL.
[2] The DC output voltage with respect to ground is approximately 0.5 × VCC.
12. Dynamic characteristics
Table 8. Dynamic characteristics
VCC = 6 V; Tamb = 25 °C; RL = 8 Ω; f = 1 kHz; VMODE = 0 V; measured in test circuit Figure 3; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Po
output power
THD+N = 10 %
1.2
1.5
-
W
THD+N = 0.5 %
0.9
1.1
-
W
THD+N = 10 %; VCC = 9 V;
-
2.2
-
W
application demo board
THD+N
total harmonic
distortion-plus-noise
Po = 0.5 W
-
0.15
0.3
%
Gv(cl)
∆Zi
Vn(o)
PSRR
closed-loop voltage gain
differential input impedance
output noise voltage
power supply rejection ratio
1 kHz
[1] 6
-
30
dB
-
100
-
kΩ
[2] -
-
100
µV
[3] −50
-
-
dB
100 Hz to 20 kHz
[4] −40
-
-
dB
VO(mute)
αcs
mute output voltage
channel separation
mute condition
[5] -
-
−40
-
200
µV
-
dB
[1] Gain of the amplifier is 2 × (R2 / R1) in test circuit of Figure 3.
[2] The noise output voltage is measured at the output in a frequency range from 20 Hz to 20 kHz (unweighted), with a source impedance
of RS = 0 Ω at the input.
[3] Power supply rejection ratio is measured at the output with a source impedance of RS = 0 Ω at the input. The ripple voltage is a
sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail.
[4] Power supply rejection ratio is measured at the output, with a source impedance of RS = 0 Ω at the input. The ripple voltage is a
sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail.
[5] Output voltage in mute position is measured with an input voltage of 1 V (RMS) in a bandwidth of 20 kHz, which includes noise.
SA58637_1
Product data sheet
Rev. 01 — 25 February 2008
© NXP B.V. 2008. All rights reserved.
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