PSMN3R5-30YL_09 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

NXP Semiconductors
PSMN3R5-30YL
N-channel TrenchMOS logic level FET
003aac718
003aac707
120
6
g_fs
(S)
R_DSon
(mΩ)
V_GS (V) = 3.2
100
5
80
60
40
0
10
20
30
40 _{ID (A)} 50
4
4.5
3
10
2
0
20
40
60
80 _{ID (A)} 100
Fig 9. Forward transconductance as a function of
drain current; typical values
10^-1
I_D
(A)
10^-2
003aab271
min
typ
max
10^-3
10^-4
10^-5
10^-6
0
1
2 V_GS (V) 3
Fig 10. Drain-source on-state resistance as a function
of drain current; typical values
003aac337
3
VGS (th)
(V)
2
1
max
typ
min
0
-6 0
0
60
120
180
Tj (°C)
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
Fig 12. Gate-source threshold voltage as a function of
junction temperature
PSMN3R5-30YL_3
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 31 December 2009
© NXP B.V. 2009. All rights reserved.
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