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PSMN017-80PS Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel 80 V 17 mΩ standard level MOSFET in TO220
NXP Semiconductors
PSMN017-80PS
N-channel 80 V 17 mΩ standard level MOSFET in TO220
50
RDSon
(mΩ)
40
003aad466
30
20
10
4
8
12
16
20
VGS (V)
10−1
ID
(A)
10−2
10−3
10−4
10−5
10−6
0
03aa35
min typ max
2
4
6
VGS (V)
Fig 9. Drain-source on-state resistance as a function Fig 10. Sub-threshold drain current as a function of
of gate-source voltage; typical values
gate-source voltage
5
VGS(th)
(V)
4
003aad280
3
a
max
2.4
003aae090
3
typ
1.8
2
min
1.2
1
0.6
0
−60
0
60
120
180
Tj (°C)
0
-60
0
60
120
180
Tj (°C)
Fig 11. Gate-source threshold voltage as a function of Fig 12. Normalized drain-source on-state resistance
junction temperature
factor as a function of junction temperature
PSMN017-80PS_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 11 March 2010
© NXP B.V. 2010. All rights reserved.
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