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| PSMN017-80PS Datasheet, PDF (5/14 Pages) NXP Semiconductors – N-channel 80 V 17 mΩ standard level MOSFET in TO220 | |||
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NXP Semiconductors
PSMN017-80PS
N-channel 80 V 17 m⦠standard level MOSFET in TO220
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Min
Static characteristics
V(BR)DSS
VGS(th)
drain-source
ID = 250 µA; VGS = 0 V; Tj = -55 °C
72
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
80
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 10 1
voltage
and 11
ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 10 -
and 11
ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 10 2
and 11
IDSS
IGSS
RDSon
RG
drain leakage current VDS = 80 V; VGS = 0 V; Tj = 25 °C
-
VDS = 80 V; VGS = 0 V; Tj = 125 °C
-
gate leakage current VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
drain-source on-state
resistance
VGS = 10 V; ID = 10 A; Tj = 100 °C; see Figure 12 -
VGS = 10 V; ID = 10 A; Tj = 25 °C; see Figure 13 -
internal gate resistance f = 1 MHz
-
(AC)
Dynamic characteristics
QG(tot)
QGS
QGS(th)
total gate charge
gate-source charge
pre-threshold
gate-source charge
ID = 0 A; VDS = 0 V; VGS = 10 V
-
ID = 25 A; VDS = 40 V; VGS = 10 V; see Figure 14 -
and 15
-
-
QGS(th-pl) post-threshold
-
gate-source charge
QGD
gate-drain charge
-
VGS(pl)
gate-source plateau ID = 25 A; VDS = 40 V; see Figure 15
-
voltage
Ciss
input capacitance
VDS = 40 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C;
-
Coss
output capacitance
see Figure 16
-
Crss
reverse transfer
-
capacitance
td(on)
turn-on delay time
VDS = 40 V; RL = 1.6 â¦; VGS = 10 V;
-
tr
rise time
RG(ext) = 4.7 â¦
-
td(off)
turn-off delay time
-
tf
fall time
-
Source-drain diode
VSD
source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 17 -
trr
reverse recovery time IS = 50 A; dIS/dt = 100 A/µs; VGS = 0 V;
-
Qr
recovered charge
VDS = 40 V
-
[1] Tested to JEDEC standards where applicable.
PSMN017-80PS_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 â 11 March 2010
Typ Max Unit
-
-
V
-
-
V
-
-
V
-
4.8 V
3
4
V
-
2
µA
-
38
µA
1
100 nA
1
100 nA
-
29
mâ¦
13.7 17
mâ¦
1
-
â¦
22
-
nC
26.5 -
nC
7.7 -
nC
4.6 -
nC
3
-
nC
6.3 -
nC
4.7 -
V
1573 -
pF
154 -
pF
88
-
pF
14.3 -
ns
12.3 -
ns
27
-
ns
7.7 -
ns
0.8 1.2 V
41.6 -
ns
55.5 -
nC
© NXP B.V. 2010. All rights reserved.
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