PSMN017-80PS Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel 80 V 17 mΩ standard level MOSFET in TO220

PSMN017-80PS
N-channel 80 V 17 mΩ standard level MOSFET in TO220
Rev. 01 — 11 March 2010
Objective data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
„ High efficiency due to low switching
and conduction losses
„ Suitable for standard level gate drive
sources
1.3 Applications
„ DC-to-DC converters
„ Load switching
„ Motor control
„ Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
T_mb = 25 °C; V_GS = 10 V;
see Figure 1
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 2
T_j
junction temperature
Dynamic characteristics
Q_GD
Q_G(tot)
gate-drain charge
total gate charge
V_GS = 10 V; I_D = 25 A;
V_DS = 40 V; see Figure 14
and 15
Static characteristics
R_DSon
drain-source
V_GS = 10 V; I_D = 10 A;
on-state resistance T_j = 100 °C; see Figure 12
V_GS = 10 V; I_D = 10 A;
T_j = 25 °C; see Figure 13
Min Typ Max Unit
-
-
80 V
-
-
50 A
-
-
103 W
-55 -
175 °C
-
6.3 -
nC
-
26.5 -
nC
-
-
29 mΩ
-
13.7 17 mΩ