PSMN005-75P Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology.

NXP Semiconductors
PSMN005-75P
N-channel TrenchMOS SiliconMAX standard level FET
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
10^−6
0
03aa35
min typ max
2
4
6
V_GS (V)
300
I_D
(A)
V_GS (V) = 20
10
8
7.5
200
03ah92
7
6.5
6
5.5
100
5
4.5
0
0
0.5
1
1.5 _{VDS (V)} 2
Fig 5. Sub-threshold drain current as a function of
gate-source voltage
100
I_D
(A)
75
03ah94
50
T_j = 175 °C
25 °C
25
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
5
V_GS(th)
(V)
4
max
03aa32
3
typ
2
min
1
0
0
2
4 _{VGS (V)} 6
0
−60
0
60
120
180
T_j (°C)
Fig 7. Transfer characteristics: drain current as a
Fig 8. Gate-source threshold voltage as a function of
function of gate-source voltage; typical values
junction temperature
PSMN005-75P_1
Product data sheet
Rev. 01 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
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