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PSMN005-75P Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. | |||
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NXP Semiconductors
PSMN005-75P
N-channel TrenchMOS SiliconMAX standard level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction to
mounting base
see Figure 4
thermal resistance from junction to ambient vertical in still air
Min Typ Max Unit
-
-
0.65 K/W
-
60
-
K/W
1
03af48
Zth(j-mb)
(K/W)
10â1
δ = 0.5
0.2
0.1
0.05
0.02
10â2
P
tp
δ=
T
Fig 4.
single pulse
10â3
10â6
10â5
10â4
10â3
10â2
10â1
tp
t
T
1
10
tp (s)
Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN005-75P_1
Product data sheet
Rev. 01 â 17 November 2009
© NXP B.V. 2009. All rights reserved.
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