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PMBTA45 Datasheet, PDF (7/13 Pages) NXP Semiconductors – 500 V, 150 mA NPN high-voltage low VCEsat transistor
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NXP Semiconductors
PMBTA45
500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor
1
006aab724
1
006aab725
VCEsat
(V)
10−1
(1)
(2)
(3)
VCEsat
(V)
(1)
10−1
(2)
(3)
10−2
10−1
1
10
102
103
IC (mA)
IC/IB = 5
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values
104
RCEsat
(Ω)
103
006aab726
102
(1)
(2)
10
(3)
1
10−1
10−1
1
10
102
103
IC (mA)
IC/IB = 5
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 9. Collector-emitter saturation resistance as a
function of collector current; typical values
10−2
10−1
1
10
102
103
IC (mA)
Tamb = 25 °C
(1) IC/IB = 20
(2) IC/IB = 10
(3) IC/IB = 5
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
104
RCEsat
(Ω)
103
006aab727
102
10
(1)
(2)
1
(3)
10−1
10−1
1
10
102
103
IC (mA)
Tamb = 25 °C
(1) IC/IB = 20
(2) IC/IB = 10
(3) IC/IB = 5
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
PMBTA45_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 10 March 2010
© NXP B.V. 2010. All rights reserved.
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