PMBTA45 Datasheet, PDF (6/13 Pages) NXP Semiconductors – 500 V, 150 mA NPN high-voltage low VCEsat transistor

NXP Semiconductors
PMBTA45
500 V, 150 mA NPN high-voltage low V_CEsat (BISS) transistor
200
h_FE
150
100
50
006aab720
(1)
(2)
(3)
0
10^−1
1
10
10²
10³
I_C (mA)
V_CE = 10 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 3. DC current gain as a function of collector
current; typical values
1.00
V_BE
(V)
0.75
006aab722
(1)
(2)
(3)
0.50
0.5
I_C
(A)
0.4
0.3
I_B (mA) = 70
63 ₅₆
49
42
35
28
21
14
0.2
7
0.1
006aab721
0.0
0
1
2
3
4
5
V_CE (V)
T_amb = 25 °C
Fig 4. Collector current as a function of
collector-emitter voltage; typical values
1.2
V_BEsat
(V)
0.9
0.6
006aab723
(1)
(2)
(3)
0.25
0.3
0.0
10^−1
1
10
10²
10³
I_C (mA)
0.0
10^−1
1
10
10²
10³
I_C (mA)
V_CE = 10 V
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 5. Base-emitter voltage as a function of collector
current; typical values
I_C/I_B = 5
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 6. Base-emitter saturation voltage as a function
of collector current; typical values
PMBTA45_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 10 March 2010
© NXP B.V. 2010. All rights reserved.
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