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PMBTA45 Datasheet, PDF (5/13 Pages) NXP Semiconductors – 500 V, 150 mA NPN high-voltage low VCEsat transistor
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NXP Semiconductors
PMBTA45
500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
ICBO
collector-base cut-off VCB = 360 V; IE = 0 A
-
current
VCB = 360 V; IE = 0 A;
-
Tj = 150 °C
ICES
collector-emitter
VCE = 360 V; VBE = 0 V
-
cut-off current
IEBO
emitter-base cut-off VEB = 5 V; IC = 0 A
-
current
hFE
VCEsat
VBEsat
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
VCE = 10 V
IC = 30 mA
IC = 50 mA
IC = 20 mA; IB = 2 mA
IC = 50 mA; IB = 6 mA
IC = 50 mA; IB = 5 mA
50
[1] 50
-
[1] -
[1] -
fT
transition frequency VCE = 10 V; IE = 10 mA;
-
f = 100 MHz
Cc
collector capacitance VCB = 20 V; IE = ie = 0 A;
-
f = 1 MHz
Ce
emitter capacitance VEB = 0.5 V;
-
IC = ic = 0 A; f = 1 MHz
td
delay time
tr
rise time
ton
turn-on time
VCC = 20 V; IC = 0.05 A;
-
IBon = 5 mA;
-
IBoff = −10 mA
-
ts
storage time
-
tf
fall time
-
toff
turn-off time
-
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Typ Max Unit
-
100 nA
-
10
μA
-
100 nA
-
100 nA
100 -
100 -
60
75
65
90
0.75 0.9
35
-
4
-
200 -
80
-
2700 -
2780 -
3400 -
800 -
4200 -
mV
mV
V
MHz
pF
pF
ns
ns
ns
ns
ns
ns
PMBTA45_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 10 March 2010
© NXP B.V. 2010. All rights reserved.
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