PIP212-12M Datasheet, PDF (7/21 Pages) NXP Semiconductors – DC-to-DC converter powertrain

NXP Semiconductors
PIP212-12M
DC-to-DC converter powertrain
9. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_DDC
V_DDO
V_I
V_DDG
V_O
V_c(bs)
I_O(AV)
I_ORM
V_PRDY
V_DISABLE
V_REG5V
P_tot
control circuit supply voltage
output stage supply voltage
input voltage
gate driver supply voltage
output voltage
bootstrap capacitance voltage
average output current
repetitive peak output current
voltage on pin PRDY
voltage on pin DISABLE
voltage on pin REG5V
total power dissipation
T_stg
storage temperature
T_j
junction temperature
V_DDC = 12 V; T_pcb ≤ 90 °C;
f_i = 1 MHz
V_DDC = 12 V; t_p ≤ 10 µs
T_mb = 25 °C
T_mb = 90 °C
[1] Pulse width and repetition rate limited by maximum value of T_j.
[2] Assumes a thermal resistance from junction to mounting base of 5 K/W.
10. Thermal characteristics
Table 5.
Symbol
R_th(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction
to mounting base
Conditions
device tested with upper and
lower MOSFETs in series
Min
−0.5
−0.5
−0.5
−0.5
−0.5
−0.5
-
[1] _-
−0.5
−0.5
−0.5
[2] _-
[2] _-
−55
−55
Max
Unit
+15
V
+24
V
+12.6
V
+12.6
V
V_DDO + 0.5 V
V_O + 15 V
35
A
60
A
+12.6
V
+12.6
V
+12.6
V
25
W
12
W
+150
°C
+150
°C
Min Typ Max Unit
-
3
5
K/W
PIP212-12M_4
Product data sheet
Rev. 04 — 23 October 2006
© NXP B.V. 2006. All rights reserved.
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