PHPT610035PK Datasheet, PDF (7/16 Pages) NXP Semiconductors – PNP/PNP matched high power double bipolar transistor

NXP Semiconductors
PHPT610035PK
PNP/PNP matched high power double bipolar transistor
Symbol
f_T
C_c
500
h_FE
400
300
200
100
Parameter
transition frequency
collector capacitance
Conditions
V_CE = -10 V; I_C = -100 mA;
f = 100 MHz; T_amb = 25 °C
V_CB = -10 V; I_E = 0 A; i_e = 0 A;
f = 1 MHz; T_amb = 25 °C
aaa-010858
(1)
(2)
-2.5
-45
I_C
(A)
-40
-2.0 ^-35
-30
-1.5
-1.0
(3)
-0.5
Min Typ Max Unit
-
125 -
MHz
-
30
-
pF
I_B = -50 mA
aaa-010859
-25
-20
-15
-10
-5
0
-10^-1
-1
-10
-10²
-10³
-10⁴
I_C (mA)
V_CE = −10 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig. 4. DC current gain as a function of collector
current; typical values
0
0
-1
-2
-3
-4
-5
V_CE (V)
T_amb = 25 °C
Fig. 5. Collector current as a function of collector-
emitter voltage; typical values
PHPT610035PK
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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