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PHPT610035PK Datasheet, PDF (6/16 Pages) NXP Semiconductors – PNP/PNP matched high power double bipolar transistor
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NXP Semiconductors
PHPT610035PK
PNP/PNP matched high power double bipolar transistor
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
hFE1/hFE2
hFE matching
VCE = -2 V; IC = 1 A
Per transistor
ICBO
collector-base cut-off VCB = -80 V; IE = 0 A; Tamb = 25 °C
current
VCB = -80 V; IE = 0 A; Tj = 150 °C
ICES
collector-emitter cut-off VCE = -80 V; VBE = 0 V; Tamb = 25 °C
current
IEBO
emitter-base cut-off
VEB = -7 V; IC = 0 A; Tamb = 25 °C
current
hFE
DC current gain
VCE = -10 V; IC = -500 mA;
Tamb = 25 °C
VCE = -10 V; IC = -1 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VCE = -10 V; IC = -2 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VCE = -2 V; IC = -1 A; Tamb = 25 °C
VCE = -10 V; IC = -3 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VCEsat
collector-emitter
saturation voltage
IC = -500 mA; IB = -50 mA;
Tamb = 25 °C
RCEsat
collector-emitter
saturation resistance
IC = -2 A; IB = -200 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VBEsat
base-emitter saturation IC = -1 A; IB = -50 mA; pulsed;
voltage
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = -2 A; IB = -200 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VBEon
base-emitter turn-on
voltage
VCE = -2 V; IC = -100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
td
delay time
VCC = -12.5 V; IC = -1 A; IBon = -50 mA;
tr
rise time
IBoff = 50 mA; Tamb = 25 °C
ton
turn-on time
ts
storage time
tf
fall time
toff
turn-off time
PHPT610035PK
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 October 2014
Min Typ Max Unit
0.9 1
1.1
-
-
-100 nA
-
-
-50 µA
-
-
-100 nA
-
-
-100 nA
150 220 -
80
210 -
20
100 -
100 200 -
10
40
-
-
-70 -110 mV
-
-220 -360 mV
-
110 180 mΩ
-
-0.91 -1
V
-
-1.02 -1.2 V
-
-0.68 -0.9 V
-
20
-
ns
-
180 -
ns
-
200 -
ns
-
350 -
ns
-
220 -
ns
-
570 -
ns
© NXP Semiconductors N.V. 2014. All rights reserved
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