PHPT610035PK Datasheet, PDF (1/16 Pages) NXP Semiconductors – PNP/PNP matched high power double bipolar transistor

PHPT610035PK
PNP/PNP matched high power double bipolar transistor
24 October 2014
Product data sheet
1. General description
PNP/PNP high power matched double bipolar transistor in a SOT1205 (LFPAK56D)
Surface-Mounted Device (SMD) power plastic package. Matched version of
PHPT610030PK.
NPN/NPN complement: PHPT610035NK.
2. Features and benefits
• Current gain matching 10 %
• High thermal power dissipation capability
• Suitable for high temperature applications up to 175 °C
• Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
• High energy efficiency due to less heat generation
• AEC-Q101 qualified
3. Applications
• Current mirror
• Motor control
• Power management
• Backlighting applications
• Relay replacement
• Differential amplifiers
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per transistor
V_CEO
collector-emitter
voltage
I_C
collector current
Per transistor
R_CEsat
collector-emitter
saturation resistance
Conditions
open base
I_C = -2 A; I_B = -200 mA; pulsed;
t_p ≤ 300 µs; δ ≤ 0.02; T_amb = 25 °C
Min Typ Max Unit
-
-
-100 V
-
-
-3
A
-
110 180 mΩ
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