PHP45NQ11T Datasheet, PDF (7/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
PHP45NQ11T
N-channel TrenchMOS standard level FET
0.2
4 4.2 4.4
4.6
R_DSon
(Ω)
0.15
03am91
T_j = 25 °C
V_GS (V) =
4.8
0.1
0.05
0
0
5
10
5
10
15 _{ID (A)} 20
3
a
2
03al21
1
0
-60
0
60
120
180
T_j (°C)
Fig 9. Drain-source on-state resistance as a function Fig 10. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
10
V_GS
(V)
8
I_D = 45 A
T_j = 25 °C
V_DD = 80 V
6
4
03am95
10⁴
C
(pF)
10³
03am94
C_iss
2
0
0
20
40
60
80
Q_G (nC)
10²
10^-1
1
C_oss
C_rss
10
V_DS (V) ¹⁰²
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PHP45NQ11T_2
Product data sheet
Rev. 02 — 19 November 2009
© NXP B.V. 2009. All rights reserved.
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