PHP45NQ11T Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
PHP45NQ11T
N-channel TrenchMOS standard level FET
40
I_D
(A)
30
V_GS (V) = 10 6
5.5
03am90
T_j = 25 °C
20
5
4.8
10
4.6
4.4
4.2
4
0
0
0.5
1
1.5
2
V_DS (V)
50
I_D
(A)
40
30
20
10
0
0
03am92
175 °C
T_j = 25 °C
2
4
6
V_GS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
10^−1
I_D
(A)
10^−2
03aa35
min typ max
5
V_GS(th)
(V)
4
max
03aa32
10^−3
3
typ
10^−4
2
min
10^−5
1
10^−6
0
2
4
6
V_GS (V)
0
−60
0
60
120
180
T_j (°C)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Gate-source threshold voltage as a function of
junction temperature
PHP45NQ11T_2
Product data sheet
Rev. 02 — 19 November 2009
© NXP B.V. 2009. All rights reserved.
6 of 12