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| PHP45NQ11T Datasheet, PDF (4/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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NXP Semiconductors
PHP45NQ11T
N-channel TrenchMOS standard level FET
103
ID
(A)
102
Limit RDSon = VDS / ID
10
DC
1
1
10
03aq49
tp = 10 μs
100 μs
1 ms
10 ms
102
103
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from see Figure 4
junction to mounting
base
thermal resistance from vertical in still air
junction to ambient
Min Typ Max Unit
-
-
1
K/W
-
60
-
K/W
10
Zth(j-mb)
(K/W)
1
δ = 0.5
0.2
10-1 0.1
0.05
0.02
10-2
single pulse
03am88
P
δ = tp
T
10-3
10-5
10-4
10-3
10-2
tp
t
T
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PHP45NQ11T_2
Product data sheet
Rev. 02 â 19 November 2009
© NXP B.V. 2009. All rights reserved.
4 of 12
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