PBHV9040T_09 Datasheet, PDF (7/12 Pages) NXP Semiconductors – 500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor

NXP Semiconductors
PBHV9040T
500 V, 0.25 A PNP high-voltage low V_CEsat (BISS) transistor
−10
V_CEsat
(V)
−1
006aab186
−10
V_CEsat
(V)
−1
006aab187
(1)
−10^−1
(2)
(3)
(1)
−10^−1
(2)
(3)
−10^−2
−10^−1
−1
−10
−10²
−10³
I_C (mA)
I_C/I_B = 5
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values
10⁴
R_CEsat
(Ω)
10³
006aab188
−10^−2
−10^−1
−1
−10
−10²
−10³
I_C (mA)
T_amb = 25 °C
(1) I_C/I_B = 20
(2) I_C/I_B = 10
(3) I_C/I_B = 5
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
10⁴
R_CEsat
(Ω)
10³
006aab189
10²
10²
10
(1)
10
(1)
(2)
(3)
(2)
(3)
1
1
10^−1
10^−1
−1
−10
−10²
−10³
I_C (mA)
I_C/I_B = 5
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 9. Collector-emitter saturation resistance as a
function of collector current; typical values
10^−1
10^−1
−1
−10
−10²
−10³
I_C (mA)
T_amb = 25 °C
(1) I_C/I_B = 20
(2) I_C/I_B = 10
(3) I_C/I_B = 5
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
PBHV9040T_2
Product data sheet
Rev. 02 — 15 January 2009
© NXP B.V. 2009. All rights reserved.
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