PBHV9040T_09 Datasheet, PDF(1/12 Page) NXP Semiconductors – 500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

PBHV9040T_09 Datasheet, PDF (1/12 Pages) NXP Semiconductors – 500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor

PBHV9040T

500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor

Rev. 02 â 15 January 2009

Product data sheet

1. Product proï¬le

1.1 General description

PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a

SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

NPN complement: PBHV8540T.

1.2 Features

I High voltage

I Low collector-emitter saturation voltage VCEsat

I High collector current capability IC and ICM

I High collector current gain (hFE) at high IC

I AEC-Q101 qualiï¬ed

1.3 Applications

I Electronic ballast for ï¬uorescent lighting

I LED driver for LED chain module

I LCD backlighting

I High Intensity Discharge (HID) front lighting

I Automotive motor management

I Hook switch for wired telecom

I Switch mode power supply

1.4 Quick reference data

Table 1.

Symbol

VCESM

VCEO

hFE

Quick reference data

Parameter

collector-emitter peak

voltage

collector-emitter voltage

collector current

DC current gain

Conditions

VBE = 0 V

open base

VCE = â10 V;

IC = â50 mA

Min Typ Max Unit

â500 V

â400 V

â0.25 A

100 200 -

▷