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PBHV9040T_09 Datasheet, PDF (5/12 Pages) NXP Semiconductors – 500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
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NXP Semiconductors
PBHV9040T
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
collector-base cut-off VCB = −320 V; IE = 0 A
current
VCB = −320 V; IE = 0 A;
Tj = 150 °C
ICES
collector-emitter
VCE = −320 V; VBE = 0 V
cut-off current
IEBO
emitter-base cut-off VEB = −4 V; IC = 0 A
current
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = −10 V
IC = −50 mA
IC = −100 mA
IC = −250 mA
IC = −100 mA; IB = −20 mA
VBEsat
base-emitter
saturation voltage
IC = −100 mA; IB = −20 mA
fT
transition frequency VCE = −10 V; IE = −10 mA;
f = 100 MHz
Cc
collector capacitance VCB = −20 V; IE = ie = 0 A;
f = 1 MHz
Ce
emitter capacitance VEB = −0.5 V; IC = ic = 0 A;
f = 1 MHz
td
delay time
tr
rise time
ton
turn-on time
VCC = −2 V; IC = −0.15 A;
IBon = −0.03 A;
IBoff = 0.03 A
ts
storage time
tf
fall time
toff
turn-off time
Min
-
-
-
-
100
80
[1] 10
-
[1] -
-
-
-
-
-
-
-
-
-
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Typ Max Unit
-
−100 nA
-
−10 µA
-
−100 nA
-
−100 nA
200 -
200 -
25 -
−110 −200 mV
−1 −1.1 V
55 -
MHz
7
-
pF
150 -
pF
9
-
ns
1810 -
ns
1819 -
ns
715 -
ns
1085 -
ns
1800 -
ns
PBHV9040T_2
Product data sheet
Rev. 02 — 15 January 2009
© NXP B.V. 2009. All rights reserved.
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