BUK7240-100A Datasheet, PDF (7/13 Pages) NXP Semiconductors – TrenchMOS™ standard level FET

NXP Semiconductors
BUK7240-100A
N-channel TrenchMOS standard level FET
80
I_D
(A)
60
03na51
40
20
0
0
T_j = 175 °C
T_j = 25 °C
2
4
6
8
10
V_GS (V)
10
V_GS
(V)
8
6
4
2
0
0
03na53
V_DS = 14(V)
V_DS = 80(V)
20
40
60
Q_G (nC)
Fig 9. Transfer characteristics: drain current as a
Fig 10. Gate-source voltage as a function of turn-on
function of gate-source voltage; typical values
gate charge; typical values
5
V_GS(th)
(V)
4
max
03aa32
100
R_DSon
(mΩ)
80
V_GS = 6(V)
6.5
7
03na57
8
10
3
typ
60
2
min
40
1
0
−60
0
60
120
180
T_j (°C)
20
0
20
40
60
80 100 120
I_D (A)
Fig 11. Gate-source threshold voltage as a function of Fig 12. Drain-source on-state resistance as a function
junction temperature
of drain current; typical values
BUK7240-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 23 February 2011
© NXP B.V. 2011. All rights reserved.
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