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BUK7240-100A Datasheet, PDF (4/13 Pages) NXP Semiconductors – TrenchMOS™ standard level FET
NXP Semiconductors
BUK7240-100A
N-channel TrenchMOS standard level FET
103
ID
(A)
102
RDSon = VDS / ID
10 P
tp
δ=
T
tp
t
T
1
1
D.C.
10
03na59
tp = 10 μs
100 μs
1 ms
10 ms
100 ms
102
103
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Conditions
see Figure 4
Min Typ Max Unit
-
-
1.3 K/W
-
71.4 -
K/W
10
Zth(j-mb)
(k/W)
03na60
1
0.5
0.2
0.1
10-1 0.05
0.02
Single Shot
10-2
10-6
10-5
10-4
10-3
10-2
10-1
P
tp
δ=
T
tp
t
T
1
10 tp (s) 102
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7240-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 23 February 2011
© NXP B.V. 2011. All rights reserved.
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