BUK7240-100A Datasheet, PDF (6/13 Pages) NXP Semiconductors – TrenchMOS™ standard level FET

NXP Semiconductors
BUK7240-100A
N-channel TrenchMOS standard level FET
120
I_D
10
(A)
100
V_GS = 20(V)
80
60
40
20
0
0
2
4
6
03na56
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
8
10
V_DS (V)
50
R_DSon
(mΩ)
45
40
35
30
25
20
5
03na54
8
11
14
17
20
V_GS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
10^−6
0
03aa35
min typ max
2
4
6
V_GS (V)
35
g_fs
(S)
30
25
20
15
10
5
0
0
03na55
10
20
30
40
I_D (A)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
BUK7240-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 23 February 2011
© NXP B.V. 2011. All rights reserved.
6 of 13