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BUJ103AD Datasheet, PDF (7/12 Pages) NXP Semiconductors – Silicon diffused power transistor
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Philips Semiconductors
BUJ103AD
Silicon diffused power transistor
VCC
LC
VCEclamp
probe point
IBon
LB
VBB
DUT
001aab999
10
IC
(A)
8
6
4
2
001aac000
0
0
200
400
600
800
1000
VCEclamp (V)
VCEclamp ≤ 1000 V; VCC = 150 V; VBB = −5 V;
LB = 1 µH; LC = 200 µH.
Fig 13. Test circuit for reverse bias safe operating area
Tj ≤ Tj(max).
Fig 14. Reverse bias safe operating area
102
IC
(A)
10
ICMmax
ICmax
1
10−1
001aac001
duty cycle = 0.01
II(3)
tp = 20 µs
(1)
50 µs
100 µs
200 µs
(2)
500 µs
DC
10−2
10−3
1
I(3)
10
III(3)
102
103
VCEclamp (V)
Tmb ≤ 25 °C; Mounted with heatsink compound and 30 ± 5 Newton force on the center of the envelope.
(1) Ptot maximum and Ptot peak maximum lines.
(2) Second breakdown limits.
(3) I = Region of permissible DC operation.
II = Extension for repetitive pulse operation.
III = Extension during turn-on in single transistor converters provided that RBE ≤ 100 Ω and tp ≤ 0.6 µs.
Fig 15. Forward bias safe operating area
7. Package information
Epoxy meets requirements of UL94 V-0 at 1⁄8 inch.
9397 750 14195
Product data sheet
Rev. 01 — 14 December 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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