BUJ103AD Datasheet, PDF (4/12 Pages) NXP Semiconductors – Silicon diffused power transistor

Philips Semiconductors
BUJ103AD
Silicon diffused power transistor
Table 5: Characteristics …continued
T_mb = 25 °C; unless otherwise specified.
Symbol Parameter
Conditions
h_FEsat
DC saturation current gain
Dynamic characteristics
I_C = 2.0 A; V_CE = 5 V
I_C = 3.0 A; V_CE = 5 V
Switching times (resistive load); see Figure 5 and 6
t_on
turn-on time
t_stg
storage time
I_Con = 2.5 A; I_Bon = −I_Boff = 0.5 A;
R_L = 75 Ω
t_f
fall time
Switching times (inductive load); see Figure 7 and 8
t_stg
storage time
t_f
fall time
I_Con = 2 A; I_Bon = 0.4 A; L_B = 1 µH;
V_BB = −5 V
Switching times (inductive load); see Figure 7 and 8
t_stg
storage time
t_f
fall time
I_Con = 2 A; I_Bon = 0.4 A; L_B = 1 µH;
V_BB = −5 V; T_j = 100 °C
[1] Measured with half sine-wave voltage (curve tracer).
Min Typ Max Unit
11 16 22
-
12.5 -
-
0.52 0.6 µs
-
2.7 3.3 µs
-
0.3 0.35 µs
-
1.2 1.4 µs
-
30 60 ns
-
-
1.8 µs
-
-
120 ns
6V
30 Hz to 60 Hz
300 Ω
50 V
100 Ω to 200 Ω
horizontal
oscilloscope
vertical
1Ω
001aab987
Fig 3. Test circuit for collector-emitter sustaining
voltage
I_C
(mA)
250
100
10
0
min _{VCE (V)}
V_CEOsus
001aab988
Fig 4. Oscilloscope display for collector-emitter
sustaining voltage test waveform
9397 750 14195
Product data sheet
Rev. 01 — 14 December 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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