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| BUJ103AD Datasheet, PDF (5/12 Pages) NXP Semiconductors – Silicon diffused power transistor | |||
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Philips Semiconductors
BUJ103AD
Silicon diffused power transistor
VIM
0
tp
T
VCC
RL
RB
DUT
001aab989
VIM = â6 V to +8 V; VCC = 250 V; tp = 20 µs;
δ = tp/T = 0.01.
RB and RL calculated from ICon and IBon
requirements.
Fig 5. Test circuit for resistive load switching
IBon
VBB
VCC
LC
LB
DUT
001aab991
VCC = 300 V; VBB = â5 V; LC = 200 µH; LB = 1 µH.
Fig 7. Test circuit for inductive load switching
IC
90 %
ICon
90 %
IB
ton
tstg
toff
IBon
10 %
t
tf
10 %
tr ⤠30 ns
âIBoff
t
001aab990
Fig 6. Switching times waveforms for resistive load
IC
ICon
90 %
10 %
t
tf
tstg
IB
toff
IBon
t
âIBoff
001aab992
Fig 8. Switching times waveforms for inductive load
9397 750 14195
Product data sheet
Rev. 01 â 14 December 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
5 of 12
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