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| BTA416Y-600B Datasheet, PDF (7/12 Pages) NXP Semiconductors – 16 A three-quadrant triacs insulated, high commutation, high temperature | |||
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NXP Semiconductors
BTA416Y series B and C
16 A 3-quadrant triacs insulated, high commutation, high temperature
8. Dynamic characteristics
Table 7. Dynamic characteristics
Symbol Parameter Conditions
dVD/dt
rate of rise of
off-state
voltage
VDM = 0.67 à VDRM(max); Tj = 125 °C;
exponential waveform; gate open circuit
VDM = 0.67 à VDRM(max); Tj = 150 °C;
exponential waveform; gate open circuit
dIcom/dt
rate of change
of
commutating
current
VDM = 400 V; Tj = 125 °C; IT(RMS) = 16 A;
without snubber; gate open circuit
VDM = 400 V; Tj = 150 °C; IT(RMS) = 16 A;
without snubber; gate open circuit
tgt
gate-controlle ITM = 20 A; VD = VDRM(max); IG = 0.1 A;
d turn-on time dIG/dt = 5 A/µs
BTA416Y-600B
BTA416Y-800B
Min Typ Max
1000 -
-
BTA416Y-600C
BTA416Y-800C
Min Typ Max
500 -
-
Unit
V/µs
600 -
-
300 -
-
V/µs
15 -
-
10 -
-
A/ms
6
-
-
4
-
-
A/ms
-
2
-
-
2
-
µs
1.6
VGT
VGT(25°C)
1.2
0.8
001aag168
3
IGT
(1)
IGT(25°C)
(2)
2
(3)
1
001aag165
0.4
â50
0
50
100
150
Tj (°C)
Fig 7. Normalized gate trigger voltage as a function
of junction temperature
0
â50
0
50
100
150
Tj (°C)
(1) T2â Gâ
(2) T2+ Gâ
(3) T2+ G+
Fig 8. Normalized gate trigger current as a function
of junction temperature
BTA416Y_SER_B_C_2
Product data sheet
Rev. 02 â 11 March 2008
© NXP B.V. 2008. All rights reserved.
7 of 12
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