BTA416Y-600B Datasheet, PDF (3/12 Pages) NXP Semiconductors – 16 A three-quadrant triacs insulated, high commutation, high temperature

NXP Semiconductors
BTA416Y series B and C
16 A 3-quadrant triacs insulated, high commutation, high temperature
Table 3. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
P_G(AV)
T_stg
T_j
average gate power
storage temperature
junction temperature
over any 20 ms period
Min
Max Unit
-
1
W
−40
+150 °C
-
150
°C
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/µs.
20
P_tot
(W)
16
conduction form
angle factor
(degrees) a
30
4
60
2.8
90
2.2
α
12
120
1.9
180
1.57
8
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α = 180°
120°
90°
60°
30°
4
0
0
2
4
6
8
10
12
14
α = conduction angle
Fig 1. Total power dissipation as a function of RMS on-state current; maximum values
16 _{IT(RMS) (A)} 18
180
I_TSM
(A)
150
003aab817
120
90
60
30
0
1
I_T
I_TSM
t
1/f
T_j(init) = 25 °C max
10
10²
n (number of cycles)
10³
Fig 2.
f = 50 Hz
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA416Y_SER_B_C_2
Product data sheet
Rev. 02 — 11 March 2008
© NXP B.V. 2008. All rights reserved.
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