BTA416Y-600B Datasheet, PDF (2/12 Pages) NXP Semiconductors – 16 A three-quadrant triacs insulated, high commutation, high temperature

NXP Semiconductors
BTA416Y series B and C
16 A 3-quadrant triacs insulated, high commutation, high temperature
2. Pinning information
Table 1.
Pin
1
2
3
mb
Pinning
Description
main terminal 1 (T1)
main terminal 2 (T2)
gate (G)
mounting base; isolated
Simplified outline
mb
Graphic symbol
T2
T1
G
sym051
3. Ordering information
123
SOT78D (TO-220)
Table 2. Ordering information
Type number Package
Name
Description
Version
BTA416Y-600B TO-220
BTA416Y-600C
plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT78D
3-lead TO-220
BTA416Y-800B
BTA416Y-800C
4. Limiting values
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DRM
repetitive peak off-state voltage
BTA416Y-600B; BTA416Y-600C
BTA416Y-800B; BTA416Y-800C
I_T(RMS)
RMS on-state current
full sine wave; T_mb ≤ 108 °C; see
Figure 4 and 5
I_TSM
non-repetitive peak on-state current full sine wave; T_j = 25 °C prior to
surge; see Figure 2 and 3
t = 20 ms
t = 16.7 ms
I²t
dI_T/dt
I_GM
P_GM
I²t for fusing
rate of rise of on-state current
peak gate current
peak gate power
t_p = 10 ms
I_TM = 20 A; I_G = 0.2 A;
dI_G/dt = 0.2 A/µs
Min
[1] _-
-
-
-
-
-
-
-
-
Max Unit
600
V
800
V
16
A
160
A
176
A
128
A²s
100
A/µs
4
A
5
W
BTA416Y_SER_B_C_2
Product data sheet
Rev. 02 — 11 March 2008
© NXP B.V. 2008. All rights reserved.
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