BTA216-600BT Datasheet, PDF (7/12 Pages) NXP Semiconductors – Triacs high commutation

Philips Semiconductors
BTA216-600BT
Triacs high commutation
7. Dynamic characteristics
Table 6: Dynamic characteristics
T_j = 25 °C unless otherwise specified.
Symbol Parameter
dV_D/dt rate of rise of off-state voltage
dI_com/dt rate of change of commutating
current
t_gt
gate-controlled turn-on time
Conditions
V_DM = 0.67V_DRM(max); T_j = 150 °C;
exponential waveform; gate open circuit
V_DM = 400 V; T_j = 150 °C; I_T(RMS) = 16 A;
without snubber; gate open circuit;
see Figure 12
I_TM = 20 A; V_D = V_DRM(max); I_G = 0.1 A;
dI_G/dt = 5 A/µs
Min Typ Max Unit
500 1500 -
V/µs
9
18 -
A/ms
-
2
-
µs
1.6
V_GT (T_j)
V_GT (25°C)
1.2
0.8
001aab073
3
I_GT (T_j)
(1)
I_GT (25°C)
(2)
2
(3)
1
003aab074
0.4
−50
0
50
100
150
T_j (°C)
0
-50
0
50
100
150
T_j (°C)
Fig 7. Normalized gate trigger voltage as a function of
junction temperature
(1) T2− G−
(2) T2+ G−
(3) T2+ G+
Fig 8. Normalized gate trigger current as a function of
junction temperature
BTA216-600BT_1
Product data sheet
Rev. 01 — 25 August 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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