BTA216-600BT Datasheet, PDF (6/12 Pages) NXP Semiconductors – Triacs high commutation

Philips Semiconductors
6. Static characteristics
Table 5: Static characteristics
T_j = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
I_GT
gate trigger current
V_D = 12 V; I_T = 0.1 A; see Figure 8
T2+ G+
T2+ G−
T2− G−
I_L
latching current
V_D = 12 V; I_GT = 0.1 A; see Figure 10
T2+ G+
T2+ G−
T2− G−
I_H
holding current
V_T
on-state voltage
V_GT
gate trigger voltage
I_D
off-state current
V_D = 12 V; I_GT = 0.1 A; see Figure 11
I_T = 20 A; see Figure 9
V_D = 12 V; I_T = 0.1 A; see Figure 7
V_D = 400 V; I_T = 0.1 A; T_j = 150 °C
V_D = V_DRM(max); T_j = 150 °C
[1] Device does not trigger in the T2− G+ quadrant.
BTA216-600BT
Triacs high commutation
Min Typ Max Unit
[1]
2
18 50 mA
2
21 50 mA
2
34 50 mA
-
31 60 mA
-
34 90 mA
-
30 60 mA
-
31 60 mA
-
1.2 1.5 V
-
0.7 1.5 V
0.25 0.4 -
V
-
0.5 3
mA
BTA216-600BT_1
Product data sheet
Rev. 01 — 25 August 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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