BTA216-600BT Datasheet, PDF (1/12 Pages) NXP Semiconductors – Triacs high commutation

BTA216-600BT
Triacs high commutation
Rev. 01 — 25 August 2005
Product data sheet
1. Product profile
1.1 General description
Passivated high commutation triac in a plastic envelope. Featuring high maximum junction
temperature and high commutation capability. Intended for use in circuits where high static
and dynamic dV/dt and high dI/dt can occur. This device will commutate the full rated RMS
current at the maximum rated junction temperature, without the aid of a snubber.
1.2 Features
s High maximum junction temperature
s High commutation capability
1.3 Quick reference data
s V_DRM ≤ 600 V
s I_GT ≤ 50 mA
s T_j ≤ 150 °C
s I_T(RMS) ≤ 16 A
s I_TSM ≤ 140 A
s dI_com/dt = 18 A/ms
2. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning
Description
main terminal 1 (T1)
main terminal 2 (T2)
gate (G)
mounting base
Simplified outline
mb
[1]
Symbol
T2
T1
G
sym051
[1] Connected to main terminal 2 (T2)
123
SOT78 (TO-220AB)