BTA201W Datasheet, PDF (7/13 Pages) NXP Semiconductors – 1 A Three-quadrant triacs high commutation

NXP Semiconductors
BTA201W series E
1 A Three-quadrant triacs high commutation
7. Dynamic characteristics
Table 6. Dynamic characteristics
Symbol Parameter
Conditions
BTA201W-600E and BTA201W-800E
dV_D/dt
rate of rise of off-state V_DM = 0.67V_DRM(max); T_j = 125 °C;
voltage
exponential waveform; gate open circuit
dI_com/dt
rate of change of
commutating current
V_DM = 400 V; T_j = 125 °C; I_T(RMS) = 4 A;
gate open circuit
dV_com/dt = 20 V/µs
dV_com/dt = 10 V/µs
t_gt
gate-controlled turn-on I_TM = 20 A; V_D = V_DRM(max); I_G = 0.1 A;
time
dI_G/dt = 5 A/µs
Min
Typ
Max Unit
600
-
-
V/µs
2.5
-
-
3.5
-
-
-
2
-
A/ms
A/ms
µs
1.6
V_GT
V_GT(25°C)
1.2
0.8
001aab101
3
I_GT
I_GT(25°C)
2
(1)
(2)
(3)
1
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0.4
−50
0
50
100
150
T_j (°C)
0
−50
0
(3)
(2)
(1)
50
100
150
T_j (°C)
Fig 7. Normalized gate trigger voltage as a function of
junction temperature
(1) T2− G−
(2) T2+ G−
(3) T2+ G+
Fig 8. Normalized gate trigger current as a function of
junction temperature
BTA201W_SER_E_2
Product data sheet
Rev. 02 — 17 September 2007
© NXP B.V. 2007. All rights reserved.
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