BTA201W Datasheet, PDF (6/13 Pages) NXP Semiconductors – 1 A Three-quadrant triacs high commutation

NXP Semiconductors
BTA201W series E
1 A Three-quadrant triacs high commutation
6. Static characteristics
Table 5. Static characteristics
T_j = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
BTA201W-600E and BTA201W-800E
I_GT
gate trigger current
V_D = 12 V; I_T = 0.1 A; see Figure 8
T2+ G+
-
-
10
mA
T2+ G−
-
-
10
mA
T2− G−
-
-
10
mA
I_L
latching current
V_D = 12 V; I_GT = 0.1 A; see Figure 10
T2+ G+
-
-
12
mA
T2+ G−
-
-
20
mA
T2− G−
-
-
12
mA
I_H
holding current
V_D = 12 V; I_GT = 0.1 A; see Figure 11 -
-
12
mA
V_T
on-state voltage
I_T = 1.4 A; see Figure 9
-
1.2
1.5
V
V_GT
gate trigger voltage
V_D = 12 V; I_T = 0.1 A; see Figure 7
-
0.7
1.5
V
V_D = 400 V; I_T = 0.1 A; T_j = 125 °C
0.2
0.3
-
V
I_D
off-state current
V_D = V_DRM(max); T_j = 125 °C
-
0.1
0.5
mA
BTA201W_SER_E_2
Product data sheet
Rev. 02 — 17 September 2007
© NXP B.V. 2007. All rights reserved.
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