BTA2008 Datasheet, PDF (7/12 Pages) NXP Semiconductors – 0.8 A Three-quadrant triacs high commutation

NXP Semiconductors
BTA2008 series D and E
0.8 A Three-quadrant triacs high commutation
7. Dynamic characteristics
Table 6. Dynamic characteristics
Symbol Parameter
Conditions
dV_D/dt rate of rise of off-state
voltage
V_DM = 0.67 × V_DRM(max);
T_j = 125 °C; exponential
waveform; gate open circuit
dI_com/dt rate of change of
commutating current
V_DM = 400 V; T_j = 125 °C;
I_T(RMS) = 0.8 A;
dV/dt = 10 V/µs; gate open
circuit
t_gt
gate-controlled turn-on time I_TM = 1 A; V_D = V_DRM(max);
I_G = 0.1 A; dI_G/dt = 5 A/µs
BTA2008-600D
BTA2008-800D
Min Typ Max
200 -
-
BTA2008-600E Unit
BTA2008-800E
Min Typ Max
600 -
- V/µs
0.5 -
- 1.6 -
- A/ms
-
2
-
-
2
- µs
1.6
V_GT
V_GT(25°C)
1.2
0.8
001aab101
3
(1)
I_GT
I_GT(25°C)
2
(2)
(3)
1
001aac669
0.4
−50
0
50
100
150
T_j (°C)
Fig 7. Normalized gate trigger voltage as a function
of junction temperature
0
−50
0
50
100
150
T_j (°C)
(1) T2− G−
(2) T2+ G−
(3) T2+ G+
Fig 8. Normalized gate trigger current as a function
of junction temperature
BTA2008_SER_D_E_1
Product data sheet
Rev. 01 — 18 January 2008
© NXP B.V. 2008. All rights reserved.
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