BTA2008 Datasheet, PDF (2/12 Pages) NXP Semiconductors – 0.8 A Three-quadrant triacs high commutation

NXP Semiconductors
BTA2008 series D and E
0.8 A Three-quadrant triacs high commutation
3. Ordering information
Table 2. Ordering information
Type number Package
Name
Description
BTA2008-600D TO-92
plastic single-ended leaded (through hole) package; 3 leads
BTA2008-600E
BTA2008-800D
BTA2008-800E
4. Limiting values
Version
SOT54
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DRM
repetitive peak off-state voltage
BTA2008-600D; BTA2008-600E
BTA2008-800D; BTA2008-800E
I_T(RMS)
RMS on-state current
full sine wave; T_lead ≤ 70 °C; see
Figure 4 and 5
I_TSM
non-repetitive peak on-state current full sine wave; T_j = 25 °C prior to
surge; see Figure 2 and 3
t = 20 ms
t = 16.7 ms
I²t
dI_T/dt
I_GM
P_GM
P_G(AV)
T_stg
T_j
I²t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
t_p = 10 ms
I_TM = 1.5 A; I_G = 20 mA;
dI_G/dt = 0.2 A/µs
over any 20 ms period
Min
[1] _-
-
-
-
-
-
-
-
-
-
−40
-
Max Unit
600
V
800
V
0.8
A
9
A
9.9
A
0.41
A²s
100
A/µs
1
A
5
W
0.1
W
+150 °C
125
°C
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 6 A/µs.
BTA2008_SER_D_E_1
Product data sheet
Rev. 01 — 18 January 2008
© NXP B.V. 2008. All rights reserved.
2 of 12