 English |
|
|
|
|
|
|
|
| BTA2008 Datasheet, PDF (6/12 Pages) NXP Semiconductors – 0.8 A Three-quadrant triacs high commutation | |||
| |||
| ◁ |
NXP Semiconductors
BTA2008 series D and E
0.8 A Three-quadrant triacs high commutation
6. Static characteristics
Table 5. Static characteristics
Tj = 25 °C unless otherwise speciï¬ed.
Symbol Parameter
Conditions
IGT
gate trigger current VD = 12 V; IT = 0.1 A; see Figure 8
T2+ G+
T2+ Gâ
T2â Gâ
IL
latching current
VD = 12 V; IGT = 0.1 A;
see Figure 10
T2+ G+
T2+ Gâ
T2â Gâ
IH
holding current
VD = 12 V; IGT = 0.1 A;
see Figure 11
VT
on-state voltage IT = 0.85 A; see Figure 9
VGT
gate trigger voltage VD = 12 V; IT = 0.1 A; see Figure 7
VD = 400 V; IT = 0.1 A; Tj = 125 °C
ID
off-state current
VD = VDRM(max); Tj = 125 °C
BTA2008-600D
BTA2008-800D
Min Typ Max
BTA2008-600E Unit
BTA2008-800E
Min Typ Max
0.25 -
0.25 -
0.25 -
5 0.5
-
10 mA
5 0.5
-
10 mA
5 0.5
-
10 mA
-
-
10
-
-
12 mA
-
-
20
-
-
20 mA
-
-
10
-
-
12 mA
-
-
10
-
-
12 mA
- 1.35 1.6
-
0.9
2
0.2 0.3
-
-
0.1 0.5
- 1.35 1.6 V
-
0.9
2V
0.2 0.3
-V
-
0.1 0.5 mA
BTA2008_SER_D_E_1
Product data sheet
Rev. 01 â 18 January 2008
© NXP B.V. 2008. All rights reserved.
6 of 12
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese