BFU730F Datasheet, PDF (7/12 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor

NXP Semiconductors
BFU730F
NPN wideband silicon germanium RF transistor
50
G
(dB)
40
001aam858
50
G
(dB)
40
001aam859
30
MSG
20
IS21I²
10
G_p(max)
MSG
30
MSG
20
G_p(max)
IS21I²
10
MSG
0
0
5
10
15
20
25
f (GHz)
0
0
5
10
15
20
25
f (GHz)
V_CE = 2 V; I_C = 5 mA; T_amb = 25 °C.
V_CE = 2 V; I_C = 17 mA; T_amb = 25 °C.
Fig 7. Gain as a function of frequency; typical values Fig 8. Gain as a function of frequency; typical values
2.0
NF_min
(dB)
1.5
(1)
001aam860
2.0
NF_min
(dB)
1.5
001aam861
1.0
(2)
1.0
(3)
(4)
(5)
0.5
0.5
0
0
5
10
15
I_C (mA)
V_CE = 2 V; T_amb = 25 °C.
(1) f = 12 GHz
(2) f = 5.8 GHz
(3) f = 2.4 GHz
(4) f = 1.8 GHz
(5) f = 1.5 GHz
Fig 9. Minimum noise figure as a function of
collector current; typical values
0
0
2
4
6
8 10 12 14
f (GHz)
I_C = 5 mA; V_CE = 2 V; T_amb = 25 °C.
Fig 10. Minimum noise figure as a function of
frequency; typical values
BFU730F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 29 April 2011
© NXP B.V. 2011. All rights reserved.
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