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BFU730F Datasheet, PDF (1/12 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor | |||
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BFU730F
NPN wideband silicon germanium RF transistor
Rev. 1 â 29 April 2011
Product data sheet
1. Product profile
CAUTION
1.1 General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a
plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
1.2 Features and benefits
 Low noise high gain microwave transistor
 Noise figure (NF) = 0.8 dB at 5.8 GHz
 High maximum power gain 18.5 dB at 5.8 GHz
 110 GHz fT silicon germanium technology
1.3 Applications
 2nd LNA stage and mixer stage in DBS LNBâs
 Low noise amplifiers for microwave communications systems
 Ka band oscillators DROâs
 Low current battery equipped applications
 Microwave driver / buffer applications
 Wi-Fi / WLAN / WiMAX
 GPS
 RKE
 AMR
 ZigBee
 LTE, cellular, UMTS
 SDARS first stage LNA
 FM radio
 Mobile TV
 Bluetooth
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