BFU730F Datasheet, PDF (2/12 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor

NXP Semiconductors
BFU730F
NPN wideband silicon germanium RF transistor
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
V_CBO
V_CEO
V_EBO
I_C
P_tot
h_FE
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
DC current gain
C_CBS
f_T
collector-base
capacitance
transition frequency
G_p(max) maximum power gain
NF
noise figure
P_L(1dB) output power at 1 dB
gain compression
Conditions
open emitter
open base
open collector
T_sp ≤ 90 °C
I_C = 2 mA; V_CE = 2 V;
T_j = 25 °C
V_CB = 2 V; f = 1 MHz
I_C = 25 mA; V_CE = 2 V;
f = 2 GHz; T_amb = 25 °C
I_C = 17 mA; V_CE = 2 V;
f = 12 GHz; T_amb = 25 °C
I_C = 5 mA; V_CE = 2 V;
f = 12 GHz; Γ_S = Γ_opt
I_C = 15 mA; V_CE = 2.5 V;
Z_S = Z_L = 50 Ω;
f = 5.8 GHz; T_amb = 25 °C
Min Typ
--
--
--
-5
[1] _-
-
205 380
- 55
- 55
[2] _-
12.5
- 1.30
- 12.5
Max
10
2.8
1.0
30
197
555
-
-
-
-
-
Unit
V
V
V
mA
mW
fF
GHz
dB
dB
dBm
[1] T_sp is the temperature at the solder point of the emitter lead.
[2] G_p(max) is the maximum power gain, if K > 1. If K < 1 then G_p(max) = Maximum Stable Gain (MSG).
2. Pinning information
Table 2.
Pin
1
2
3
4
Discrete pinning
Description
emitter
base
emitter
collector
Simplified outline Graphic symbol
3
4
4
2
1
2
1, 3
mbb159
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
BFU730F
-
plastic surface-mounted flat pack package; reverse
pinning; 4 leads
Version
SOT343F
BFU730F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 29 April 2011
© NXP B.V. 2011. All rights reserved.
2 of 12