BFU725F Datasheet, PDF (7/11 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor

NXP Semiconductors
BFU725F/N1
NPN wideband silicon germanium RF transistor
50
G
(dB)
40
30
20
10
MSG
IS21I²
001aah430
G_p(max)
MSG
50
G
(dB)
40
30
20
10
MSG
IS21I²
001aah431
G_p(max)
MSG
0
10^−2
10^−1
1
10
10²
f (GHz)
0
10^−2
10^−1
1
10
10²
f (GHz)
V_CE = 2 V; I_C = 5 mA; T_amb = 25 °C.
V_CE = 2 V; I_C = 25 mA; T_amb = 25 °C.
Fig 7. Gain as a function of frequency; typical values Fig 8. Gain as a function of frequency; typical values
2.0
NF_min
(dB)
1.6
1.2
0.8
0.4
001aah432
(1)
(2)
(3)
(4)
(5)
2.0
NF_min
(dB)
1.6
1.2
0.8
0.4
001aah433
(1)
(2)
0
0
10
20
30
I_C (mA)
V_CE = 2 V; T_amb = 25 °C.
(1) f = 12 GHz
(2) f = 5.8 GHz
(3) f = 2.4 GHz
(4) f = 1.8 GHz
(5) f = 1.5 GHz
Fig 9. Minimum noise figure as a function of
collector current; typical values
0
0
4
8
V_CE = 2 V; T_amb = 25 °C.
(1) I_C = 25 mA
(2) I_C = 5 mA
12
16
f (GHz)
Fig 10. Minimum noise figure as a function of
frequency; typical values
BFU725F_N1_1
Product data sheet
Rev. 01 — 13 July 2009
© NXP B.V. 2009. All rights reserved.
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