BFU725F Datasheet, PDF (1/11 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor

BFU725F/N1
NPN wideband silicon germanium RF transistor
Rev. 01 — 13 July 2009
Product data sheet
1. Product profile
CAUTION
1.1 General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a
plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
1.2 Features
I Low noise high gain microwave transistor
I Noise figure (NF) = 0.7 dB at 5.8 GHz
I High maximum stable gain 27 dB at 1.8 GHz
I 110 GHz f_T silicon germanium technology
1.3 Applications
I 2nd LNA stage and mixer stage in DBS LNB’s
I Satellite radio
I Low noise amplifiers for microwave communications systems
I WLAN and CDMA applications
I Analog/digital cordless applications
I Ka band oscillators (DRO’s)
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
V_CBO
V_CEO
V_EBO
I_C
P_tot
h_FE
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
DC current gain
Conditions
open emitter
open base
open collector
T_sp ≤ 90 °C
I_C = 10 mA; V_CE = 2 V;
T_j = 25 °C
Min Typ
--
--
--
- 25
[1] _-
-
160 280
Max
10
2.8
0.55
40
136
400
Unit
V
V
V
mA
mW