BFU725F Datasheet, PDF (4/11 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor

NXP Semiconductors
BFU725F/N1
NPN wideband silicon germanium RF transistor
7. Characteristics
Table 7. Characteristics
T_j = 25 °C unless otherwise specified.
Symbol Parameter
V_(BR)CBO collector-base breakdown
voltage
V_(BR)CEO collector-emitter breakdown
voltage
I_C
I_CBO
h_FE
C_CES
C_EBS
C_CBS
f_T
G_p(max)
collector current
collector-base cut-off current
DC current gain
collector-emitter capacitance
emitter-base capacitance
collector-base capacitance
transition frequency
maximum power gain
|s₂₁|²
insertion power gain
NF
noise figure
G_ass
associated gain
Conditions
I_C = 2.5 µA; I_E = 0 mA
I_C = 1 mA; I_B = 0 mA
I_E = 0 mA; V_CB = 4.5 V
I_C = 10 mA; V_CE = 2 V
V_CB = 2 V; f = 1 MHz
V_EB = 0.5 V; f = 1 MHz
V_CB = 2 V; f = 1 MHz
I_C = 25 mA; V_CE = 2 V; f = 2 GHz; T_amb = 25 °C
I_C = 25 mA; V_CE = 2 V; T_amb = 25 °C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 12 GHz
I_C = 25 mA; V_CE = 2 V; T_amb = 25 °C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 12 GHz
I_C = 5 mA; V_CE = 2 V; Γ_S = Γ_opt; T_amb = 25 °C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 12 GHz
I_C = 5 mA; V_CE = 2 V; Γ_S = Γ_opt; T_amb = 25 °C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 12 GHz
Min Typ Max Unit
10 - - V
2.8 - - V
- 25 40 mA
- - 100 nA
160 280 400
- 268 - fF
- 400 - fF
- 70 - fF
- 55 - GHz
[1]
- 28 - dB
- 27 - dB
- 25.5 - dB
- 18 - dB
- 13 - dB
- 26.7 - dB
- 25.4 - dB
- 23 - dB
- 16 - dB
- 9.3 - dB
- 0.42 - dB
- 0.43 - dB
- 0.47 - dB
- 0.7 - dB
- 1.1 - dB
- 24 - dB
- 22 - dB
- 20 - dB
- 13.5 - dB
- 10 - dB
BFU725F_N1_1
Product data sheet
Rev. 01 — 13 July 2009
© NXP B.V. 2009. All rights reserved.
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