PXT2222A Datasheet, PDF (6/10 Pages) NXP Semiconductors – NPN switching transistor

NXP Semiconductors
NPN switching transistor
Product data sheet
PXT2222A
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
I_CBO
I_EBO
h_FE
V_CEsat
V_BEsat
C_c
C_e
f_T
F
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
I_E = 0 A; V_CB = 60 V
−
I_E = 0 A; V_CB = 60 V; T_j = 125 °C
−
I_C = 0 A; V_BE = 5 V
−
I_C = 0.1 mA; V_CE = 10V
35
I_C = 1 mA; V_CE = 10 V
50
I_C = 10 mA; V_CE = 10 V
75
I_C = 10 mA; V_C = 10 V; T_j = −55 °C
35
I_C = 150 mA; V_CE = 1 V
50
I_C = 150 mA; V_CE = 10 V
100
I_C = 500 mA; V_CE = 10 V
40
I_C = 150 mA; I_B = 15 mA
−
I_C = 500 mA; I_B = 50 mA
−
I_C = 150 mA; I_B = 15 mA
0.6
I_C = 500 mA; I_B = 50 mA
−
I_E = i_e = 0 A; V_CB = 10 V; f = 1 MHz −
I_C = i_c = 0 A; V_EB = 500 mV; f = 1 MHz −
I_C = 20 mA; V_CE = 10 V; f = 100 MHz 300
I_C = 200 µA; V_CE = 5 V; R_S = 2 kΩ;
−
f = 1 kHz; B = 200 Hz
Switching times (between 10% and 90% levels); (see Fig.6)
t_on
turn-on time
t_d
delay time
t_r
rise time
t_off
turn-off time
t_s
storage time
t_f
fall time
I_Con = 150 mA; I_Bon = 15 mA;
−
I_Boff = −15 mA
−
−
−
−
−
MAX.
10
10
10
−
−
−
−
−
300
−
300
1
1.2
2
8
25
−
4
35
15
20
250
200
60
UNIT
nA
µA
nA
mV
V
V
V
pF
pF
MHz
dB
ns
ns
ns
ns
ns
ns
2004 Nov 22
6