PXT2222A Datasheet, PDF (3/10 Pages) NXP Semiconductors – NPN switching transistor

NXP Semiconductors
NPN switching transistor
Product data sheet
PXT2222A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
T_stg
T_j
T_amb
storage temperature
junction temperature
ambient temperature
CONDITIONS
open emitter
open base
open collector
T_amb ≤ 25 °C
note 1
note 2
note 3
MIN.
−
−
−
−
−
−
MAX.
60
40
6
100
200
100
UNIT
V
V
V
mA
mA
mA
−
0.5
W
−
0.8
W
−
1.1
W
−65
+150 °C
−
150
°C
−65
+150 °C
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm².
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm².
1600
P_tot
(mW)
1200
(1)
(2)
800
(3)
400
006aaa238
0
−75
−25
25
75
125
175
T_amb (°C)
(1) FR4 PCB; 6 cm² mounting pad for collector.
(2) FR4 PCB; 1 cm² mounting pad for collector.
(3) FR4 PCB; standard footprint.
Fig.2 Power derating curves.
2004 Nov 22
3