PSMN7R0-30YL Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

NXP Semiconductors
PSMN7R0-30YL
N-channel TrenchMOS logic level FET
Table 6. Characteristics …continued
Symbol Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage I_S = 25 A; V_GS = 0 V; T_j = 25 °C; see
Figure 17
t_rr
reverse recovery time I_S = 20 A; dI_S/dt = -100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 20 V
Min Typ Max Unit
-
0.88 1.2 V
-
30
-
ns
-
22
-
nC
80
I_D
(A)
60
40
20
0
0
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T_j = 150 °C
25 °C
1
2
3 _{VGS (V)} 4
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60
g_fs
(S)
50
40
30
0
10
20
30 _{ID (A)} 40
Fig 5. Transfer characteristics: drain current as a
Fig 6. Forward transconductance as a function of
function of gate-source voltage; typical values
drain current; typical values
14
R_DSon
(mΩ)
12
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100
I_D
10
(A)
V_GS (V) = 4.5
80
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10
8
6
4
2
4
6
8 _{VGS (V)} 10
60
3.2
3
40
2.8
20
2.6
2.4
2.2
0
0
2
4
6
8
10
V_DS (V)
Fig 7. Drain-source on-state resistance as a function Fig 8. Output characteristics: drain current as a
of gate-source voltage; typical values
function of drain-source voltage; typical values
PSMN7R0-30YL_1
Preliminary data sheet
Rev. 01 — 15 October 2008
© NXP B.V. 2008. All rights reserved.
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