PDTC144V Datasheet, PDF (6/11 Pages) NXP Semiconductors – NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ

NXP Semiconductors
PDTC144V series
NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ
10³
h_FE
10²
10
006aaa099
(2) (1)
(3)
1
V_CEsat
(V)
10^−1
006aaa100
(1)
(2)
(3)
1
10^−1
1
10
10²
I_C (mA)
V_CE = 5 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
10
006aaa101
V_I(on)
(1)
(V)
(2)
(3)
10^−2
1
10
10²
I_C (mA)
I_C/I_B = 20
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −40 °C
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
10
006aaa102
V_I(off)
(1)
(V)
(2)
(3)
1
10^−1
1
10
10²
I_C (mA)
V_CE = 0.3 V
(1) T_amb = −40 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 3. On-state input voltage as a function of
collector current; typical values
1
10^−1
1
10
I_C (mA)
V_CE = 5 V
(1) T_amb = −40 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 4. Off-state input voltage as a function of
collector current; typical values
PDTC144V_SER_4
Product data sheet
Rev. 04 — 16 November 2009
© NXP B.V. 2009. All rights reserved.
6 of 11